Polycrystalline Si films formed by Al-induced crystallization (AIC) with and without Al oxides at Al/a-Si interface

Solar Energy Materials and Solar Cells

Volumn 74, Issue 1-4, 2002, Pages 323-329

  Kim, Hyeongnam ^a   Kim, Daewon ^a   Lee, Gyuyul ^a   Kim, Dongseop ^a   Lee, Soo Hong ^a  

^a Samsung SDI   (South Korea)

Author keywords

Al induced crystallization (AIC); Back surface field (BSF); Interfacial Al oxide; Seed layer

Indexed keywords

ALUMINA; ANNEALING; CRYSTAL ORIENTATION; CRYSTALLIZATION; ELECTRIC CONDUCTIVITY OF SOLIDS; GRAIN SIZE AND SHAPE; INTERFACES (MATERIALS); LIQUID PHASE EPITAXY; POLYCRYSTALLINE MATERIALS; POLYSILICON; THERMAL EFFECTS;

METAL-INDUCED CRYSTALLIZATIONS (MIC);

THIN FILMS;

EID: 0036778144     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0927-0248(02)00091-0     Document Type: Article

References (7)

1. Thin film poly-Si formation for solar cells by flux method and Cat-CVD method
2. A high performance thin-film transistor using a low temperature poly-Si by silicide mediated crystallization
3. The effects of extended heat treatment on Ni induced lateral crystallization of amorphous silicon thin films
4. Elucidation of the layer exchange mechanism in the formation of polycrystalline silicon by aluminum-induced crystallization
5. Crystallization of silicon in aluminium/amorphous-silicon multilayers
6. Diffusivity and solubility of Si in the Al metallization of the integrated circuits