Influence of interface and Al structure on layer exchange during aluminum-induced crystallization of amorphous silicon

Journal of Applied Physics

Volumn 88, Issue 2, 2000, Pages 716-724

  Nast, Oliver ^a,b   Hartmann, Andreas J ^a  

^a UNIVERSITY OF NEW SOUTH WALES   (Australia)

^b HAHN MEITNER INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000656440     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.373727     Document Type: Article

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