메뉴 건너뛰기




Volumn , Issue , 2008, Pages 767-770

Microcrystalline piezoresistive polysilicon film obtained by aluminum induced crystallization

Author keywords

Aluminum induced crystallization; Flexible substrate; Gauge factor; Piezoresistance; Polysilicon thin film

Indexed keywords

ALUMINA; ALUMINUM; AMORPHOUS MATERIALS; AMORPHOUS SILICON; ANNEALING; CRYSTALLIZATION; LIGHT METALS; METALLIC FILMS; NANOCRYSTALLINE ALLOYS; NANOTECHNOLOGY; POLYCRYSTALLINE MATERIALS; POLYSILICON; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SUBSTRATES; THICK FILMS;

EID: 55349089220     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/NANO.2008.229     Document Type: Conference Paper
Times cited : (3)

References (14)
  • 1
    • 0001039356 scopus 로고    scopus 로고
    • O. Nast, and S. R. Wenham, Elucidation of the layer exchange mechanism in the formation of polycrystalline silicon by aluminum-induced crystallization, J. Appl. Phys., 88, pp. 124-132, 2000.
    • O. Nast, and S. R. Wenham, "Elucidation of the layer exchange mechanism in the formation of polycrystalline silicon by aluminum-induced crystallization", J. Appl. Phys., 88, pp. 124-132, 2000.
  • 2
    • 32644456894 scopus 로고    scopus 로고
    • Investigation of structural properties of poly-Si thin films obtained by aluminum induced crystallization in different atmospheres
    • D. Dimova-Malinovska, V. Grigorov, M. Nikolaeva- Dimitrova, O. Angelov, and N. Peev, "Investigation of structural properties of poly-Si thin films obtained by aluminum induced crystallization in different atmospheres", Thin Solid Films, vol. 501, pp. 358-361, 2006.
    • (2006) Thin Solid Films , vol.501 , pp. 358-361
    • Dimova-Malinovska, D.1    Grigorov, V.2    Nikolaeva- Dimitrova, M.3    Angelov, O.4    Peev, N.5
  • 3
    • 33746649080 scopus 로고    scopus 로고
    • Large-grained poly-silicon thin films by aluminum-induced crystallization of microcrystalline silicon
    • G. Ekanayake, T. Quinn, and H. S. Reehal, "Large-grained poly-silicon thin films by aluminum-induced crystallization of microcrystalline silicon", J. Crystal Growth, vol. 293, pp. 351-358, 2006.
    • (2006) J. Crystal Growth , vol.293 , pp. 351-358
    • Ekanayake, G.1    Quinn, T.2    Reehal, H.S.3
  • 4
    • 10844231885 scopus 로고    scopus 로고
    • Reaction between amorphous Si and crystalline Al in Al/Si and Si/Al bilayers: Microstructural and thermodynamic analysis of layer exchange
    • D. He, J.Y. Wang, and E. J. Mittemeijer, "Reaction between amorphous Si and crystalline Al in Al/Si and Si/Al bilayers: microstructural and thermodynamic analysis of layer exchange", J. Appl. Phys. A, vol 80, pp. 501-509, 2005.
    • (2005) J. Appl. Phys. A , vol.80 , pp. 501-509
    • He, D.1    Wang, J.Y.2    Mittemeijer, E.J.3
  • 6
    • 36449002729 scopus 로고
    • Interaction of aluminum with hydrogenated amorphous silicon at low temperatures
    • M. S. Haque, H.A. Naseem, and W. D. Brown, "Interaction of aluminum with hydrogenated amorphous silicon at low temperatures", J. Appl. Phys., vol. 75, pp. 3928-3935, 1994.
    • (1994) J. Appl. Phys , vol.75 , pp. 3928-3935
    • Haque, M.S.1    Naseem, H.A.2    Brown, W.D.3
  • 9
    • 0024481433 scopus 로고
    • Piezoresistance in polysilicon and its applications to strain gauges
    • P.J. French, and A.G. R. Evans, "Piezoresistance in polysilicon and its applications to strain gauges", Solid- State Elect., vol. 32, pp.1-10, 1989.
    • (1989) Solid- State Elect , vol.32 , pp. 1-10
    • French, P.J.1    Evans, A.G.R.2
  • 10
    • 0037197302 scopus 로고    scopus 로고
    • Polysilicon: A versatile material for Microsystems
    • P. J. French, "Polysilicon: a versatile material for Microsystems", Sens. and Act. A, vol .99, pp. 3-12, 2002.
    • (2002) Sens. and Act. A , vol.99 , pp. 3-12
    • French, P.J.1
  • 11
    • 33749153200 scopus 로고    scopus 로고
    • Poly-silicon thin films by aluminum induced crystallization of microcrystalline silicon
    • G. Ekanayake, and H. S. Reehal, "Poly-silicon thin films by aluminum induced crystallization of microcrystalline silicon", Vacuum, vol. 81, pp. 272-278, 2006.
    • (2006) Vacuum , vol.81 , pp. 272-278
    • Ekanayake, G.1    Reehal, H.S.2
  • 12
    • 0000656440 scopus 로고    scopus 로고
    • Influence of interface and Al structure on layer exchange during aluminum-induced crystallization of amorphous silicon
    • O. Nast, and A. J. Hartmann, "Influence of interface and Al structure on layer exchange during aluminum-induced crystallization of amorphous silicon", J. Appl. Phys., vol. 88, pp. 716-724, 2000.
    • (2000) J. Appl. Phys , vol.88 , pp. 716-724
    • Nast, O.1    Hartmann, A.J.2
  • 13
    • 34547582144 scopus 로고    scopus 로고
    • A model of preferential (100) crystal orientation of Si grains grown by aluminum-induced layer-exchange process
    • A. Sarikov, J. Schneider, M. Muske, I. Sieber, and S. Gall, "A model of preferential (100) crystal orientation of Si grains grown by aluminum-induced layer-exchange process". Thin Solid Films, vol. 515, pp. 7465-7468, 2007.
    • (2007) Thin Solid Films , vol.515 , pp. 7465-7468
    • Sarikov, A.1    Schneider, J.2    Muske, M.3    Sieber, I.4    Gall, S.5
  • 14
    • 34249930710 scopus 로고    scopus 로고
    • Growth kinetics and crystallographic properties of polysilicon thin films formed by aluminum-induced crystallization
    • E. Pihan, A. Slaoui, and C. Maurice, "Growth kinetics and crystallographic properties of polysilicon thin films formed by aluminum-induced crystallization",J. Crystl. Growth, vol. 305, pp. 88-98, 2007.
    • (2007) J. Crystl. Growth , vol.305 , pp. 88-98
    • Pihan, E.1    Slaoui, A.2    Maurice, C.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.