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Volumn 108, Issue 5, 2010, Pages

The role of ultrathin AlN barrier in the reduction in the hot electron and self-heating effects for GaN-based double-heterojunction high electron mobility transistors

(4) Wang, L a Hu, W D a Chen, X S a Lu, W a

a SHANGHAI INSTITUTE OF TECHNICAL PHYSICS (China)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN; ALN; ALN BARRIERS; CONDUCTION BAND OFFSET; CONDUCTION-BAND PROFILE; CRITICAL VALUE; DH-HEMTS; DOUBLE-HETEROJUNCTION; FERMI-DIRAC STATISTICS; GAN/INGAN; HIGH VOLTAGE; HOT ELECTRON EFFECTS; HYDRODYNAMIC MODEL; MAXIMUM FIELD STRENGTH; PASSIVATION LAYER; POISSON'S EQUATION; POLARIZATION CHARGES; SELF-HEATING EFFECT; SIMULATION RESULT; THERMAL IMPEDANCE; TWO-DIMENSIONAL NUMERICAL SIMULATION; ULTRA-THIN; ULTRA-THIN BARRIERS;

BICMOS TECHNOLOGY; COMPUTER SIMULATION; ELECTRON MOBILITY; ELECTRONS; GALLIUM ALLOYS; GALLIUM NITRIDE; HEATING; HETEROJUNCTIONS; HOT ELECTRONS; PASSIVATION; POISSON EQUATION; POLARIZATION; SILICON ON INSULATOR TECHNOLOGY; TRANSPORT PROPERTIES;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 77956805865 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3481349 Document Type: Article

Times cited : (21)

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