Reduction of self-heating in AlGaN/GaN HFETs using thick AlN surface passivation films

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 5, Issue 9, 2008, Pages 2972-2975

  Tanaka, N ^a   Takita, H ^a   Sumida, Y ^b   Suzuki, T ^a  

^a JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

^b POWDEC K K   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN HETEROJUNCTION; ALGAN/GAN HFETS; ALN; ALN FILMS; APPLIED VOLTAGES; NEGATIVE DIFFERENTIAL CONDUCTANCE; SELF-HEATING; SURFACE PASSIVATION;

FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE; HEATING; HETEROJUNCTIONS;

PASSIVATION;

EID: 77951273736     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200779230     Document Type: Conference Paper

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