AlGaN/InGaN/GaN double heterostructure field-effect transistor

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 40, Issue 11 A, 2001, Pages

  Simin, Grigory ^a   Hu, Xuhong ^a,b   Tarakji, Ahmad ^b   Zhang, Jianping ^a   Koudymov, Alexey ^a   Saygi, Salih ^a   Yang, Jinwei ^a   Khan, Asif ^a   Shur, Michael S ^b   Gaska, Remis ^b  

^a University of South Carolina   (United States)

^b SENSOR ELECTRONIC TECHNOLOGY INC   (United States)

Author keywords

GaN; HEMT; Heterostructure; HFET; InGaN; LP MOCVD

Indexed keywords

BAND STRUCTURE; CARRIER CONCENTRATION; COMPUTER SIMULATION; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; LIGHT POLARIZATION; OPTICAL VARIABLES MEASUREMENT; PHOTOLUMINESCENCE; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS;

BANDGAP OFFSETS; CARRIER CONFINEMENT; GAIN COMPRESSION; POLARIZATION CHARGES;

HETEROJUNCTIONS;

EID: 0035517506     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.l1142     Document Type: Letter

References (17)