Demonstration of 13.56-MHz class-E amplifier using a high-voltage GaN power-HEMT

IEEE Electron Device Letters

Volumn 27, Issue 5, 2006, Pages 326-328

  Saito, Wataru ^a   Domon, Tomokazu ^a   Omura, Ichiro ^a   Kuraguchi, Masahiko ^a   Takada, Yoshiharu ^a   Tsuda, Kunio ^a   Yamaguchi, Masakazu ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

Gallium nitride (GaN); HEMT; High frequency; High voltage

Indexed keywords

AMPLIFIERS (ELECTRONIC); POWER ELECTRONICS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SWITCHING CIRCUITS;

CLASS-E AMPLIFIER; HIGH-FREQUENCY SWITCHING POWER APPLICATIONS; HIGH-VOLTAGE POWER-ELECTRONICS APPLICATIONS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 33646234462     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2006.873756     Document Type: Article

References (13)

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