High performance and large area flip-chip bonded AlGaN/GaN MODFETs

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1997, Pages 569-572

  Thibeault, B J ^a   Keller, B P ^a   Wu, Y F ^a   Fini, P ^a   Mishra, U K ^a   Nguyen, C ^a   Nguyen, N X ^a   Le, M ^a  

^a Widegap Technology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MODULATION DOPED FIELD EFFECT TRANSISTORS (MODFET);

BONDING; COMPUTER SIMULATION; CURRENT DENSITY; FLIP CHIP DEVICES; HEAT RESISTANCE; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SUBSTRATES; TRANSCONDUCTANCE;

FIELD EFFECT TRANSISTORS;

EID: 84886448142     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)