AlGaN-GaN double-channel HEMTs

IEEE Transactions on Electron Devices

Volumn 52, Issue 4, 2005, Pages 438-446

  Chu, Rongming ^a,b   Zhou, Yugang ^a   Liu, Jie ^a   Wang, Deliang ^a   Chen, Kevin J ^a   Lau, Kei May ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

^b University of South Carolina   (United States)

Author keywords

AlGaN; Current collapse; Double channel; GaN; High electron mobility transistor (HEMT); Power amplifier

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRON SCATTERING; GALLIUM NITRIDE; INTERFACES (MATERIALS); MULTILAYERS; POLARIZATION; POWER AMPLIFIERS; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH;

ALUMINUM GALLIUM NITRIDE; CURRENT COLLAPSE; DOUBLE CHANNEL HEMTS; ELECTRON VELOCITY DEGRADATION; INTERFACE SCATTERING; MULTILAYER STRUCTURE GROWTH; POLARIZATION FIELD; SAPPHIRE SUBSTRATE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 17444377535     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2005.844791     Document Type: Article

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