MOCVD-grown high-mobility Al0.3Ga0.7N/AlN/GaN HEMT structure on sapphire substrate

Journal of Crystal Growth

Volumn 298, Issue SPEC. ISS, 2007, Pages 791-793

  Wang, Xiaoliang ^a   Wang, Cuimei ^a   Hu, Guoxin ^a   Xiao, Hongling ^a   Fang, Cebao ^a   Wang, Junxi ^a   Ran, Junxue ^a   Li, Jianping ^a   Li, Jinmin ^a   Wang, Zhanguo ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

A1. 2DEG; A1. Electron mobility; A3. MOCVD; B2. Semiconducting III V materials; B3. HEMT

Indexed keywords

ALUMINUM NITRIDE; ATOMIC FORCE MICROSCOPY; ELECTRON MOBILITY; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SAPPHIRE; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

CRYSTAL QUALITY; INTERFACIAL LAYER; SHEET RESISTANCE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 33846423871     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.10.217     Document Type: Article

References (9)

1. Shen L., Heikman S., Moran B., Coffie R., Zhang N.-Q., Buttari D., Smorchkova I.P., Keller S., DenBaars S.P., and Mishra U.K. IEEE Electron Dev. Lett 22 (2001) 457
2. Balme R.S., Hilton K.P., Nash K.J., Uren M.J., Wallis D.J., Wells A., Missous M., and Martin T. Phys. Stat. Sol. (c) (2003) 2331
3. Miyoshi M., Ishikawa H., Egawa T., Asai K., Mouri M., Shibata T., Tanaka M., and Oda O. Appl. Phys. Lett. 85 (2004) 1710
4. Wang X.L., Wang C.M., Hu G.X., et al. Solid State Electron 49 (2005) 1387
5. Wang X.L., Wang C.M., Hu G.X., et al. Science in China. Ser.F Information Sciences 48 6 (2005) 808
6. Kim D.-J., Moon Y.-T., Yi M.-S., et al. J. Kor. Phys. Soc. 42 5 (2003) 691
7. Shealy J.R., Prunty T.R., Chumbes E.M., et al. J.Crystal Growth 250 (2003) 7
8. Thompson R., Prunty T., Kaper V., and Shealy J.R. IEEE Trans. Electron Dev. 51 (2004) 292
9. Hsu L., and Walukiewicz W. J. Appl. Phys. 89 (2001) 1783