Highly linear Al0.3 Ga0.7 N-Al0.05 Ga0.95 N-GaN composite-channel HEMTs

IEEE Electron Device Letters

Volumn 26, Issue 3, 2005, Pages 145-147

  Liu, Jie ^a   Zhou, Yugang ^a   Chu, Rongming ^a   Cai, Yong ^a   Chen, Kevin J ^a   Lau, Kei May ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

AlGaN GaN; Channel engineering; Composite channel; High electron mobility transistors (HEMTs); Linearity

Indexed keywords

ELECTRIC CURRENTS; GALLIUM NITRIDE; POWER AMPLIFIERS; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; TRANSCONDUCTANCE;

CHANNEL ENGINEERING; COMPOSITE CHANNEL;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 15544386945     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2005.843218     Document Type: Article

References (11)

1. U. K. Mishra, P. Parikh, and Y. F. Wu, "AlGaN/GaN HEMTs - An overview of device operation and applications," Proc. IEEE, vol. 90, no. 6, pp. 1022-1031, Jun. 2002.
2. K. Kasahara, N. Miyamoto, Y. Ando, Y. Okamoto, T. Nakayama, and M. Kuzuhara, "Ka-band 2.3 W power AlGaN-GaN heterojunction FET," in IEDM. Tech. Dig., Dec. 2002, pp. 667-680.
3. K. Joshin, T. Kikkawa, H. Hayashi, S. Yokogawa, M. Yokoyama, N. Adachi, and M. Takikawa, "A 174 W high-efficiency GaN HEMT power amplifier for W-CDMA base station applications," in IEDM Tech. Dig., Dec. 2003, pp. 983-985.
4. Y. F. Wu, A. Saxler, M. Moore, R. R Smith, S. Sheppard, P. M. Chavarkar, T. Wisleder, U. K. Mishra, and P. Parikh, "30-W/mm GaN HEMTs by field plate optimization," IEEE Electron Device Lett., vol. 25, no. 3, pp. 117-119, Mar. 2004.
5. Y. F. Wu, P. M. Chavarkar, M. Moore, P. Parikh, and U. K. Mishra, "Linearity and gain characteristics of AlGaN-GaN HEMTs," in IEDM Tech. Dig., Dec. 2002, pp. 697-699.
6. M. Nagahara, T. Kikkawa, N. Adachi, Y. Tateno, S. Kato, M. Yokoyama, S. Yokogama, T. Kimura, Y. Yamaguchi, N. Hara, and K. Joshin, "Improved intermodulation distortion profile of AlGaN-GaN HEMT at high drain bias voltage," in IEDM Tech. Dig., Dec. 2002, pp. 693-696.
7. A. Chini, D. Buttari, R. Coffie, L. Shen, S. Heikman, A. Chakraborty, S. Keller, and U. K. Mishra, "Power and linearity characteristics of field-plated recessed-gate AlGaN-GaN HEMTs," IEEE Electron Device Lett., vol. 25, no. 5, pp. 229-231, May 2004.
8. A. Karakji, H. Fatima, X. Hu, J.-P. Zhang, G. Simin, M. A. Khan, M. S. Shur, and R. Gaska, "Large-signal linearity in III-N MOSDHFETs," IEEE Electron Device Lett., vol. 24, no. 6, pp. 369-371, Jun. 2003.
9. Y. F. Wu, A. Saxler, T. Wisleder, M. Moore, R. P. Smith, S. Sheppard, P. M. Chavarkar, and P. Parikh, "Linearity performance of GaN HEMTs with field plates," in Proc. Device Research Conf., Notre Dame, IN, 2004, pp. 35-36.
10. T linearity in GaN-based HEMTs," in Proc. Device Research Conf., Notre Dame, IN, 2004, pp. 41-42.
11. T.-H. Yu and K. F. Brennan, "Theoretical study of the two-dimensional electron mobility in strained III-nitride heterostructures," J. Appl. Phys., vol. 89, pp. 3827-3834, 2001.