An AlGaN/GaN high-electron-mobility transistor with an AlN sub-buffer layer

Journal of Physics Condensed Matter

Volumn 14, Issue 13, 2002, Pages 3499-3509

  Shealy, J R ^a   Kaper, V ^a   Tilak, V ^a   Prunty, T ^a   Smart, J A ^a   Green, B ^a   Eastman, L F ^a  

^a Cornell University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; ELECTRONS; EPITAXIAL GROWTH; GALLIUM NITRIDE; LEAKAGE CURRENTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SILICON CARBIDE; SUBSTRATES;

BUFFER LAYER; GATE-LAG; GATE-LEAKAGE CURRENT; NITRIDE STRUCTURE; POWER DENSITY;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0037041122     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/14/13/308     Document Type: Article

References (7)

1. Undoped AlGaN/GaN HEMTs for microwave power amplification
2. The effects of an AlN sub-buffer structure on the performance of OMVPE grown AlGaN/GaN HEMTs on SiC substrates
3. AlGaN/GaN heterostructures on insulating AlGaN nucleation layers
4. Effect of passivation on HEMT device performance