DC and RF characteristics of AlGaN/GaN/InGaN/GaN double-heterojunction HEMTs

IEEE Transactions on Electron Devices

Volumn 54, Issue 1, 2007, Pages 2-10

  Liu, Jie ^a,b   Zhou, Yugang ^a,c   Zhu, Jia ^a   Cai, Yong ^a,b   Lau, Kei May ^a   Chen, Kevin J ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

^b HONG KONG APPLIED SCIENCE AND TECHNOLOGY RESEARCH INSTITUTE   (Hong Kong)

^c Advanced Packaging Technology Ltd   (China)

Author keywords

AlGaN GaN; Depletion mode (D mode); Double heterojunction (DH); Enhancement mode (E mode); HEMTs; InGaN

Indexed keywords

DEPLETION-MODE; DOUBLE-HETEROJUNCTION HEMTS; ENHANCEMENT-MODE;

ELECTRON MOBILITY; HETEROJUNCTIONS; LEAKAGE CURRENTS; PIEZOELECTRIC DEVICES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 33846107798     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.887045     Document Type: Article

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