Simulation of surface state effects in the transient response of AlGaN/GaN HEMT and GaN MESFET devices

Semiconductor Science and Technology

Volumn 21, Issue 8, 2006, Pages 1150-1159

  Tirado, J M ^a   Sanchez Rojas, J L ^a   Izpura, J I ^b  

^a UNIVERSITY OF CASTILLA LA MANCHA   (Spain)

^b UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; HOLE MOBILITY; IONIZATION; MATHEMATICAL MODELS; NUMERICAL ANALYSIS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE;

ENERGY LEVEL; FREE HOLE ACCUMULATION; GATE VOLTAGE; TRANSIENT SIMULATIONS;

MESFET DEVICES;

EID: 33749040667     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/21/8/029     Document Type: Article

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