High electron mobility transistors based on the AlN/GaN heterojunction

Microelectronic Engineering

Volumn 86, Issue 4-6, 2009, Pages 1071-1073

  Adikimenakis, A ^a,b   Aretouli, K E ^a,b   Iliopoulos, E ^a,b   Kostopoulos, A ^a,b   Tsagaraki, K ^a,b   Konstantinidis, G ^a,b   Georgakilas, A ^a,b  

^a INSTITUTE OF ELECTRONIC STRUCTURE AND LASER   (Greece)

^b UNIVERSITY OF CRETE   (Greece)

Author keywords

Aluminum nitride; Gallium nitride; High electron mobility transistors; Molecular beam epitaxy

Indexed keywords

ALN; ALN BARRIERS; ALN LAYERS; GAN CAP LAYERS; GATE LENGTHS; HETEROSTRUCTURES; MAXIMUM TRANSCONDUCTANCES; PLASMA ASSISTED MOLECULAR BEAM EPITAXIES; ROOM TEMPERATURES; SOURCE-DRAIN CURRENTS; TWO-DIMENSIONAL ELECTRON GASSES (2DEG);

ALUMINA; ALUMINUM; ALUMINUM GALLIUM NITRIDE; ALUMINUM NITRIDE; CRYSTAL GROWTH; DRAIN CURRENT; ELECTRIC RESISTANCE; ELECTRON GAS; ELECTRON MOBILITY; ELECTRONS; GALLIUM ALLOYS; GALLIUM NITRIDE; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM WIRES; SILICON ON INSULATOR TECHNOLOGY; TRANSISTORS; TWO DIMENSIONAL ELECTRON GAS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 67349236391     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2009.02.004     Document Type: Article

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