Interface states mediated reverse leakage through metal/ Alx Ga1-x NGaN Schottky diodes

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 26, Issue 6, 2008, Pages 1987-1992

  Lu, Changzhi ^a   Zhang, Xiaoling ^a   Xie, Xuesong ^a   Feng, Shiwei ^a   Diagne, Ibrahima ^b   Khan, Arif ^c   Noor Mohammad, S ^b,d  

^a BEIJING UNIVERSITY OF TECHNOLOGY   (China)

^b UNIVERSITY OF MARYLAND   (United States)

^c Electrocom Corporation   (United States)

^d NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER HEIGHT ENHANCEMENTS; BARRIER HEIGHTS; BREAK DOWN VOLTAGES; DEFECT STATES; HETEROSTRUCTURE; HIGH DENSITIES; HIGH POWERS; HIGH TEMPERATURES; INTERFACE STATES; PIEZOELECTRIC POLARIZATIONS; POLARIZATION INDUCED CHARGES; REVERSE LEAKAGE CURRENTS; REVERSE LEAKAGES; SCHOTTKY CONTACTS; SCHOTTKY DIODES; SIGNIFICANT IMPACTS; SPONTANEOUS POLARIZATIONS; WIDE TEMPERATURE RANGES;

DEFECT DENSITY; ELECTRIC CONDUCTIVITY; ELECTRON GAS; GALLIUM NITRIDE; IONIZATION OF GASES; LEAKAGE CURRENTS; MICROWAVE DEVICES; MICROWAVES; POLARIZATION; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM; TWO DIMENSIONAL ELECTRON GAS;

PHASE INTERFACES;

EID: 57249103715     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3002393     Document Type: Article

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