The role of the interface insulator layer and interface states on the current-transport mechanism of Schottky diodes in wide temperature range

Microelectronic Engineering

Volumn 83, Issue 3, 2006, Pages 499-505

  Altindal, Şemsettin ^a   Dökme, Ilbilge ^a   Bülbül, M Mahir ^a   Yalçin, Necati ^a   Serin, Tülay ^b  

^a GAZI UNIVERSITY   (Turkey)

^b ANKARA UNIVERSITY   (Turkey)

Author keywords

Current transport mechanism; I V characteristics; Insulator layer; Interface states; Schottky barriers

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; INTERFACES (MATERIALS); MODIFICATION; THERMAL EFFECTS;

CURRENT-TRANSPORT MECHANISM; I-V CHARACTERISTICS; INSULATOR LAYER; INTERFACE STATES; SCHOTTKY BARRIERS;

SCHOTTKY BARRIER DIODES;

EID: 33244461030     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2005.11.014     Document Type: Article

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