Low-resistance ohmic contacts to SiC nanowires and their applications to field-effect transistors

Nanotechnology

Volumn 19, Issue 34, 2008, Pages

  Jang, Chan Oh ^a   Kim, Tae Hong ^a   Lee, Seung Yong ^a   Kim, Dong Joo ^a   Lee, Sang Kwon ^a  

^a Chonbuk National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONTACTORS; ELECTRIC WIRE; HEALTH; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOWIRES; NONMETALS; OHMIC CONTACTS; SILICON; SILICON CARBIDE; TRANSISTORS;

DOPED SILICON; ELECTRICAL CHARACTERIZATIONS; FIELD EFFECT TRANSISTOR (FET); LOW RESISTANCE; MODIFIED TRANSMISSION LINE MODEL (MTLM); SIC NANOWIRES; SPECIFIC CONTACT RESISTANCES;

FIELD EFFECT TRANSISTORS;

CARBON NANOTUBE; NANOWIRE; SILICON;

ARTICLE; ELECTRIC ACTIVITY; ELECTRON BEAM; PRIORITY JOURNAL; SEMICONDUCTOR; TEMPERATURE;

EID: 48249119612     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/19/34/345203     Document Type: Article

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