Arsenic doping of ZnO nanowires by post-annealing treatment

Nanotechnology

Volumn 16, Issue 6, 2005, Pages 764-768

  Lee, Woong ^a   Jeong, Min Chang ^a   Joo, Sang Woo ^b   Myoung, Jae Min ^a  

^a Yonsei University   (South Korea)

^b Soongsil University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ARSENIC; CRYSTAL GROWTH; HIGH RESOLUTION ELECTRON MICROSCOPY; PHOTOLUMINESCENCE; RAMAN SPECTROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SUBSTITUTION REACTIONS; TRANSMISSION ELECTRON MICROSCOPY; ZINC OXIDE;

DOPANTS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY (HRTEM); NANOWIRES; PHOTOLUMINESCENCE (PL) SPECTROSCOPY;

NANOSTRUCTURED MATERIALS;

EID: 18744365491     PISSN: 09574484     EISSN: None     Source Type: Journal    
DOI: 10.1088/0957-4484/16/6/024     Document Type: Article

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