Model for Schottky barrier and surface states in nanostructured n-type semiconductors

Journal of Applied Physics

Volumn 91, Issue 2, 2002, Pages 808-814

  Malagu C ^a   Guidi, V ^a,b   Stefancich, M ^a   Carotta, M C ^a   Martinelli, G ^a  

^a UNIVERSITY OF FERRARA   (Italy)

^b INFN SEZIONE DI FERRARA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

BANDBENDING; DEPLETION APPROXIMATION; GRAIN RADIUS; GRANULOMETRIES; INTERGRANULAR; N-TYPE SEMICONDUCTORS; NANO-SIZED; NANO-STRUCTURED; POLYCRYSTALLINE; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY BARRIERS; SCHOTTKY CONTACTS; SEMICLASSICAL MODEL; SPHERICAL GEOMETRIES; SURFACE STATE DENSITY;

SCHOTTKY BARRIER DIODES;

SURFACE STATES;

EID: 0037080499     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1425434     Document Type: Article

References (28)

1. F. Flores, Surf. Rev. Lett. 2, 513 (1995).
2. L. J. Brillson, in Handbook of Semiconductors, edited by T. S. Moss (Elsevier, Amsterdam, 1992).
3. E. H. Rhoderic and R. H. Williams, in Metal-Semiconductor Contacts (Oxford Science, Oxford, 1988).
4. K. Stilies and A. Khan, Phys. Rev. Lett. 60, 440 (1988).
5. J. Y. W. Seto, J. Appl. Phys. 46, 5247 (1975).
6. J. L. Solis, A. Hoel, V. Lantto, and C. G. Granqvist, J. Appl. Phys. 89, 2727 (2001).
7. L. Diederich, P. Aebi, O. M. Kuttel, and L. Schlapbach, Surf. Sci. 424, L314 (1999).
8. N. Barsan, M. Schweizer-Berberich, and W. Goepel Fresenius, J. Anal. Chem. USSR 365, 287 (1999).
9. J. Bardeen, Phys. Rev. 71, 717 (1947).
10. W. E. Spicer, P. W. Chye, P. R. Skeath, C. Y. Su, and I. Lindau, J. Vac. Sci. Technol. 16, 1422 (1979).
11. T. T. Rantala, T. S. Rantala, and V. Lantto, Surf. Sci. 420, 103 (1999).
12. M. Shur, in Physics of Semiconductor Devices (Prentice-Hall, New York, 1990), pp. 140-199.
13. G. Martinelli, M. C. Carotta, E. Traversa, and G. Ghiotti, MRS Bull. 24, 25 (1999).
14. H. Hasegawa, T. Sato, and S. Kasai, Appl. Surf. Sci. 166, 92 (2000).
15. P. Romppainen and V. Lantto, J. Appl. Phys. 63, 5159 (1988).
16. G. Martinelli and M. C. Carotta, Sens. Actuators B 23, 157 (1995).
17. V. Mikhelashvili, G. Eisenstein, and R. Uzdin, Solid-State Electron. 45, 143 (2001).
18. G. Martinelli, M. C. Carotta, and C. Malagù, Electron Technol. 33, 40 (2000).
19. J. W. Orton and M. Powell, Rep. Prog. Phys. 43, 81 (1980).
20. M. C. Carotta, C. Dallara, G. Martinelli, and L. Passari, Sens. Actuators B 3, 191 (1991).
21. J. F. McAleer, P. T. Moseley, J. O. W. Norris, and D. E. Williams, J. Chem. Soc., Faraday Trans. 1 83, 1323 (1987).
22. W. H. Press, in Numerical Recipes (Cambridge University, New York, 1992).
23. H. B. Keller, in Numerical Methods for Two-Point Boundary-Value Problems (Blaisdell, Waltham, 1968).
24. M. J. Madou and S. R. Morrison, in Chemical Sensing with Solid State Devices (Academic, New York, 1989), pp. 74-83.
25. S. Kurtin, T. C. McGill, and C. A. Mead, Phys. Rev. Lett. 26, 1433 (1969).
26. M. P. Shaw, in Handbook on Semiconductors (North-Holland, Amsterdam, 1985), pp. 51-60.
27. G. Williams and G. S. V. Coles, MRS Bull. 24, 25 (1999).
28. M. C. Carotta, M. Ferroni, V. Guidi, and G. Martinelli, Adv. Mater. 11, 943 (1999).