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Journal of Applied Physics

Volumn 104, Issue 2, 2008, Pages

Experimental investigation of electron transport properties of gallium nitride nanowires

(4) Motayed, Abhishek a Davydov, Albert V a Mohammad, S N b Melngailis, John b

a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY (United States)

b UNIVERSITY OF MARYLAND (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; ELECTRIC WIRE; ELECTRON TRANSPORT PROPERTIES; GALLIUM ALLOYS; GALLIUM COMPOUNDS; GALLIUM NITRIDE; LITHOGRAPHY; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOWIRES; NITRIDES; NONMETALS; SEMICONDUCTING GALLIUM; SILICON; STANDARDS; TRANSISTORS; TRANSPORT PROPERTIES;

EXPERIMENTAL INVESTIGATIONS; GALLIUM NITRIDE NANOWIRES; MICRO-FABRICATION TECHNIQUES; OXIDIZED SILICON; ROOM-TEMPERATURE RESISTIVITY;

FIELD EFFECT TRANSISTORS;

EID: 48849104624 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.2952035 Document Type: Article

Times cited : (32)

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