Doping-induced band edge displacements and band gap narrowing in 3C-, 4H-, 6H-SiC, and Si

Journal of Applied Physics

Volumn 84, Issue 5, 1998, Pages 2628-2637

  Lindefelt, U ^a,b,c  

^a ABB CORPORATE RESEARCH   (Sweden)

^b LINKÖPING UNIVERSITY   (Sweden)

^c ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000609466     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.368374     Document Type: Article

References (12)

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5. 0, i.e., the interaction with conduction band electrons and holes introduced into the crystal by doping, and with ionized impurities.
6. N. W. Ashcroft and N. D. Mermin, Solid State Physics (Holt-Saunders International Edition, Tokyo, 1981).
7. C. Persson and U. Lindefelt, Phys. Rev. B 54, 10257 (1996).
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9. J. D. Wiley, Phys. Rev. B 4, 2485 (1971).
10. Semiconductors - Basic Data, edited by O. Madelung, 2nd revised ed. (Springer, Berlin, 1996).
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12. B. Sernelius (private communication).