Gallium nitride nanowires: Polar surface controlled growth, ohmic contact patterning by focused ion beam induced direct Pt deposition and disorder effects; variable range hopping, and resonant electromechanical properties

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6370, Issue , 2006, Pages

  Nam, Chang Yong ^a   Tham, Douglas ^a   Jaroenapibal, Papot ^a   Kim, Jinyong ^a   Luzzi, David E ^a   Evoy, Stephane ^b   Fischer, John E ^a  

^a UNIVERSITY OF PENNSYLVANIA   (United States)

^b UNIVERSITY OF ALBERTA   (Canada)

Author keywords

Contact; FET; FIB; GaN; Growth; I V; Modulus; Morphology; Nanowire; Quality factor

Indexed keywords

AMORPHIZATION; ELASTIC MODULI; ELECTROMECHANICAL DEVICES; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE; GRAIN GROWTH; ION BEAMS; OHMIC CONTACTS; SCHOTTKY BARRIER DIODES; TRANSMISSION ELECTRON MICROSCOPY;

FOCUSED ION BEAM (FIB); QUALITY FACTORS; VARIABLE RANGE HOPPING;

NANOSTRUCTURED MATERIALS;

EID: 33846205617     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.690902     Document Type: Conference Paper

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