SCOPUS 정보 검색 플랫폼

Applied Physics Letters

Volumn 80, Issue 14, 2002, Pages 2568-2570

Enhanced tunneling across nanometer-scale metal-semiconductor interfaces

(3) Smit, G D J a Rogge, S a Klapwijk, T M a

a DELFT UNIVERSITY OF TECHNOLOGY (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

DOWN-SCALING; ELECTRICAL TRANSPORT; METAL SEMICONDUCTOR INTERFACE; NANO-METER-SCALE; PER UNIT; SCANNING TUNNELING MICROSCOPES; SI (1 1 1); ZERO-BIAS CONDUCTANCE;

DIODES; SEMICONDUCTING SILICON;

SEMICONDUCTOR DIODES;

EID: 79955984774 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1467980 Document Type: Article

Times cited : (120)

References (19)

1
- 0000091846
- prb PRBMDO 0163-1829
- D. Carroll, M. Wagner, M. Rühle, and D. Bonnell, Phys. Rev. B 55, 9792 (1997). prb PRBMDO 0163-1829
- (1997) Phys. Rev. B , vol.55 , pp. 9792
- Carroll, D.¹ Wagner, M.² Rühle, M.³ Bonnell, D.⁴

2
- 21144480018
- jva JVTAD6 0734-2101
- P. Avouris, I.-W. Lyo, and Y. Hasegawa, J. Vac. Sci. Technol. A 11, 1725 (1993). jva JVTAD6 0734-2101
- (1993) J. Vac. Sci. Technol. A , vol.11 , pp. 1725
- Avouris, P.¹ Lyo, I.-W.² Hasegawa, Y.³

3
- 0032098495
- asu ASUSEE 0169-4332
- R. Hasunuma, T. Komeda, and H. Tokumoto, Appl. Surf. Sci. 130-132, 84 (1998). asu ASUSEE 0169-4332
- (1998) Appl. Surf. Sci. , vol.130-132 , pp. 84
- Hasunuma, R.¹ Komeda, T.² Tokumoto, H.³

4
- 24644480739
- jvb JVTBD9 0734-211X
- H. Hasegawa, T. Sato, and C. Kaneshiro, J. Vac. Sci. Technol. B 17, 1856 (1999). jvb JVTBD9 0734-211X
- (1999) J. Vac. Sci. Technol. B , vol.17 , pp. 1856
- Hasegawa, H.¹ Sato, T.² Kaneshiro, C.³

5
- 4244104108
- prl PRLTAO 0031-9007
- S. Doniach, K. Chin, I. Lindau, and W. Spicer, Phys. Rev. Lett. 58, 591 (1987). prl PRLTAO 0031-9007
- (1987) Phys. Rev. Lett. , vol.58 , pp. 591
- Doniach, S.¹ Chin, K.² Lindau, I.³ Spicer, W.⁴

6
- 0347307224
- tsf THSFAP 0040-6090
- W. Yang, F. Jedema, H. Ade, and R. Nemanich, Thin Solid Films 308-309, 627 (1997). tsf THSFAP 0040-6090
- (1997) Thin Solid Films , vol.308-309 , pp. 627
- Yang, W.¹ Jedema, F.² Ade, H.³ Nemanich, R.⁴

7
- 0026908987
- mcMCHPDR 0254-0584
- R. Tung, Mater. Chem. Phys. 32, 107 (1992). mcp MCHPDR 0254-0584
- (1992) Mater. Chem. Phys. , vol.32 , pp. 107
- Tung, R.¹

8
- 0000143039
- prb PRBMDO 0163-1829
- W. Kaiser, M. Hecht, R. Fathauer, L. Bell, E. Lee, and L. Davis, Phys. Rev. B 44, 6546 (1991). prb PRBMDO 0163-1829
- (1991) Phys. Rev. B , vol.44 , pp. 6546
- Kaiser, W.¹ Hecht, M.² Fathauer, R.³ Bell, L.⁴ Lee, E.⁵ Davis, L.⁶

9
- 0343777348
- jer JESRAW 0368-2048
- H. von Känel, T. Meyer, and M. Klemenc, J. Electron Spectrosc. Relat. Phenom. 109, 197 (2000). jer JESRAW 0368-2048
- (2000) J. Electron Spectrosc. Relat. Phenom. , vol.109 , pp. 197
- Von Känel, H.¹ Meyer, T.² Klemenc, M.³

10
- 6744229784
- prl PRLTAO 0031-9007
- U. Landman, R. Barnett, A. Scherbakov, and P. Avouris, Phys. Rev. Lett. 85, 1958 (2000). prl PRLTAO 0031-9007
- (2000) Phys. Rev. Lett. , vol.85 , pp. 1958
- Landman, U.¹ Barnett, R.² Scherbakov, A.³ Avouris, P.⁴

11
- 3342986527
- prb PRBMDO 0163-1829
- R. Tung, Phys. Rev. B 45, 13509 (1992). prb PRBMDO 0163-1829
- (1992) Phys. Rev. B , vol.45 , pp. 13509
- Tung, R.¹

12
- 85006919935
- 2/Si(111) interfaces
- 2/Si(111) interfaces [

13
- 0033897108
- see, and, and sel SSELA5 0038-1101
- see S. Zhu, R. van Meirhaehge, C. Detavernier, F. Cardon, G.-P. Ru, X.-P. Qu, and B.-Z. Lee, Solid-State Electron. 44, 663 (2000), and sel SSELA5 0038-1101
- (2000) Solid-State Electron. , vol.44 , pp. 663
- Zhu, S.¹ Van Meirhaehge, R.² Detavernier, C.³ Cardon, F.⁴ Ru, G.-P.⁵ Qu, X.-P.⁶ Lee, B.-Z.⁷

14
- 0021466337
- jvb JVTBD9 0734-211X
- R. Tung, J. Vac. Sci. Technol. B 2, 465 (1984)]. jvb JVTBD9 0734-211X
- (1984) J. Vac. Sci. Technol. B , vol.2 , pp. 465
- Tung, R.¹

15
- 0030169532
- asu ASUSEE 0169-4332
- Y. Hasegawa, I.-W. Lyo, and P. Avouris, Appl. Surf. Sci. 357-358, 32 (1996). asu ASUSEE 0169-4332
- (1996) Appl. Surf. Sci. , vol.357-358 , pp. 32
- Hasegawa, Y.¹ Lyo, I.-W.² Avouris, P.³

16
- 85006903132
- 2nd ed. (Wiley, New York)
- S. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981).
- (1981) Physics of Semiconductor Devices
- Sze, S.¹

17
- 0033897108
- sel SSELA5 0038-1101
- S. Zhu, R. van Meirhaehge, C. Detavernier, F. Cardon, G.-P. Ru, X.-P. Qu, and B.-Z. Li, Solid-State Electron. 44, 663 (2000). sel SSELA5 0038-1101
- (2000) Solid-State Electron. , vol.44 , pp. 663
- Zhu, S.¹ Van Meirhaehge, R.² Detavernier, C.³ Cardon, F.⁴ Ru, G.-P.⁵ Qu, X.-P.⁶ Li, B.-Z.⁷

18
- 0000065821
- sel SSELA5 0038-1101
- C. Chang and S. Sze, Solid-State Electron. 13, 727 (1970). sel SSELA5 0038-1101
- (1970) Solid-State Electron. , vol.13 , pp. 727
- Chang, C.¹ Sze, S.²

19
- 33646908891
- It has been reported that a significant amount of acceptor-like impurities can be incorporated in the tolayer of the substrate during sample flashing at 1200°C in UHV [see, and, ], effectively reversing the doping to p-type in (initially) n-type low-doped samples. Nevertheless, the concentration of these possible p-type dopants is expected to be so low that it does not affect our main arguments. jaJAPIAU 0021-8979
- It has been reported that a significant amount of acceptor-like impurities can be incorporated in the top layer of the substrate during sample flashing at 1200°C in UHV [see M. Liehr, M. Renier, R. Wachnik, and G. Scilla, J. Appl. Phys. 61, 4619 (1987)], effectively reversing the doping to p-type in (initially) n-type low-doped samples. Nevertheless, the concentration of these possible p-type dopants is expected to be so low that it does not affect our main arguments. jap JAPIAU 0021-8979
- (1987) J. Appl. Phys. , vol.61 , pp. 4619
- Liehr, M.¹ Renier, M.² Wachnik, R.³ Scilla, G.⁴

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.