High-transparency Ni/Au bilayer contacts to n-type GaN

Journal of Applied Physics

Volumn 92, Issue 9, 2002, Pages 5218-5227

  Motayed, Abhishek ^a   Davydov, Albert V ^b   Bendersky, Leonid A ^b   Wood, Mark C ^c   Derenge, Michael A ^c   Wang, Dong Feng ^a   Jones, Kenneth A ^c   Mohammad, S Noor ^a  

^a Howard University   (United States)

^b NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^c U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER HEIGHTS; BI-LAYER; BILAYER COMPOSITES; CONTACT LAYERS; DOPING LEVELS; ELECTROOPTIC DEVICES; EXPERIMENTAL DATA; FACE-CENTERED CUBIC; INTERMETALLIC PHASIS; LOW RESISTANCE; LOW WORK FUNCTION; MATERIAL QUALITY; RAPID THERMAL ANNEALERS; REVERSE BREAKDOWN VOLTAGE; SCHOTTKY; SCHOTTKY CONTACTS; SPECIFIC CONTACT RESISTIVITY; XRD;

ANNEALING; ELECTRIC CONTACTORS; GOLD; GOLD DEPOSITS; METALLIZING; NANOCOMPOSITE FILMS; OHMIC CONTACTS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

GALLIUM NITRIDE;

EID: 18744390112     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1509109     Document Type: Article

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