I-V characteristics of Schottky contacts of semiconducting ZnSe nanowires and gold electrodes

Nanotechnology

Volumn 17, Issue 9, 2006, Pages 2420-2423

  Wang, Y G ^a,b   Zou, B S ^a,b   Wang, T H ^a,b   Wang, N ^c   Cai, Y ^c   Chan, Y F ^c   Zhou, S X ^d  

^a HUNAN UNIVERSITY   (China)

^b INSTITUTE OF PHYSICS   (China)

^c HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

^d CENTRAL IRON AND STEEL RESEARCH INSTITUTE   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC WIRE; ELECTRODES; GOLD; SCHOTTKY BARRIER DIODES; SEMICONDUCTING ZINC COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY;

GOLD ELECTRODES; NANOWIRES; SCHOTTKY BARRIERS;

NANOSTRUCTURED MATERIALS;

EID: 33646196438     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/17/9/059     Document Type: Article

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