Gaussian distribution of inhomogeneous barrier height in Al/ SiO 2/p-Si Schottky diodes

Journal of Applied Physics

Volumn 103, Issue 12, 2008, Pages

  Yildiz, D E ^a   Altindal, S ^a   Kanbur, H ^a  

^a GAZI UNIVERSITY   (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CHEMICAL ACTIVATION; DIFFUSERS (OPTICAL); DIRECT ENERGY CONVERSION; EIGENVALUES AND EIGENFUNCTIONS; ELECTRIC CONDUCTIVITY; GAUSSIAN DISTRIBUTION; LASERS; METAL INSULATOR BOUNDARIES; METALS; MIS DEVICES; NANOSTRUCTURED MATERIALS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON; SEMICONDUCTOR DIODES; SEMICONDUCTOR MATERIALS; SILICON; SILICON COMPOUNDS; STANDARDS; TEMPERATURE; THERMIONIC EMISSION; TRELLIS CODES;

AMERICAN INSTITUTE OF PHYSICS (AIP); BARRIER HEIGHT (BH); CARRIER (CO); CURRENT VOLTAGE (I V) CHARACTERISTICS; EMISSION MECHANISMS; FORWARD BIAS; GAUSSIAN; GAUSSIAN DISTRIBUTION (GD); INHOMOGENEITIES; LINEAR CORRELATIONS; LOW TEMPERATURE (LTR); METAL-INSULATOR-SEMICONDUCTOR (MIS); NEGATIVE TEMPERATURES; NONLINEARITY (INCLUDING BIFURCATION THEORY); P-TYPE SI; REVERSE BIASES; REVERSE-SATURATION CURRENTS; SCHOTTKY BARRIER (SB); SCHOTTKY DIODES; SI BAND GAP; STANDARD DEVIATION (STD); TEMPERATURE CO-EFFICIENT; TEMPERATURE DEPENDENCES; TEMPERATURE RANGES; TEMPERATURE REGIONS; TUNNELING PARAMETER; ZERO BIAS;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 46449105146     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2936963     Document Type: Article

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