ZnO nanobelt/nanowire schottky diodes formed by dielectrophoresis alignment across au electrodes

Nano Letters

Volumn 6, Issue 2, 2006, Pages 263-266

  Lao, Chang Shi ^a   Liu, Jin ^a,b   Gao, Puxian ^a   Zhang, Liyuan ^c   Davidovic, Dragomir ^c   Tummala, Rao ^b   Wang, Zhong L ^a,d,e  

^a Georgia Institute of Technology   (United States)

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^c GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^d NATIONAL CENTER FOR NANOSCIENCE AND TECHNOLOGY   (China)

^e PEKING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTROPHORESIS ALIGNMENT; ON-TO-OFF CURRENT RATIO; ZNO NANOBELT/NANOWIRE SCHOTTKY DIODES;

ELECTRODES; ELECTROPHORESIS; SCHOTTKY BARRIER DIODES; THERMAL EFFECTS; ZINC OXIDE;

NANOSTRUCTURED MATERIALS;

GOLD; NANOTUBE; SILICON; SILICON DIOXIDE; ZINC OXIDE;

ARTICLE; CHEMISTRY; ELECTRODE; ELECTROPHORESIS; INSTRUMENTATION; METHODOLOGY; NANOTECHNOLOGY; PARTICLE SIZE; SENSITIVITY AND SPECIFICITY; SURFACE PROPERTY;

ELECTRODES; ELECTROPHORESIS; GOLD; NANOTECHNOLOGY; NANOTUBES; PARTICLE SIZE; SENSITIVITY AND SPECIFICITY; SILICON; SILICON DIOXIDE; SURFACE PROPERTIES; ZINC OXIDE;

EID: 33644898897     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl052239p     Document Type: Review

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