Ultra-low contact resistance of epitaxially interfaced bridged silicon nanowires

Nano Letters

Volumn 7, Issue 6, 2007, Pages 1536-1541

  Chaudhry, Anurag ^a   Ramamurthi, Vishwanath ^a   Fong, Erin ^a   Islam, M Saif ^a  

^a University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CROSS-SECTION AREA; NANOBRIDGES; SEMICONDUCTOR NANOWIRES; SURFACE DEPLETION;

CONTACT RESISTANCE; DOPING (ADDITIVES); EPITAXIAL GROWTH; METALLIC FILMS; SILICON; SINGLE CRYSTALS;

NANOWIRES;

NANOTUBE; SILICON;

ARTICLE; CHEMISTRY; CONFORMATION; CRYSTALLIZATION; ELECTROCHEMISTRY; EVALUATION; IMPEDANCE; MACROMOLECULE; MATERIALS TESTING; METHODOLOGY; MICROELECTRODE; NANOTECHNOLOGY; PARTICLE SIZE; SURFACE PROPERTY; ULTRASTRUCTURE;

CRYSTALLIZATION; ELECTRIC IMPEDANCE; ELECTROCHEMISTRY; MACROMOLECULAR SUBSTANCES; MATERIALS TESTING; MICROELECTRODES; MOLECULAR CONFORMATION; NANOTECHNOLOGY; NANOTUBES; PARTICLE SIZE; SILICON; SURFACE PROPERTIES;

EID: 34547374344     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl070325e     Document Type: Article

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