High-temperature characteristics of GaN nano-Schottky diodes

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 40, Issue 10, 2008, Pages 3092-3096

  Lee, Seung Yong ^a   Jang, Chan Oh ^a   Hyung, Jung Hwan ^a   Kim, Tae Hong ^a   Lee, Sang Kwon ^a  

^a Chonbuk National University   (South Korea)

Author keywords

Nano Schottky diodes; Nanowires; Schottky barrier height

Indexed keywords

DIODES; ELECTRIC WIRE; FIELD EMISSION; GALLIUM ALLOYS; GALLIUM NITRIDE; MECHANISMS; METALS; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOWIRES; SEMICONDUCTING GALLIUM; SEMICONDUCTOR DIODES; SILICON SOLAR CELLS;

BARRIER HEIGHTS; CURRENT TRANSPORT; CURRENT TRANSPORT MECHANISMS; CURRENT-VOLTAGE CHARACTERIZATION; GAN NANOWIRE; GAUSSIAN; HIGH TEMPERATURE; HIGH TEMPERATURES; IDEALITY FACTORS; NANO-SCHOTTKY DIODES; SCHOTTKY; SCHOTTKY BARRIER HEIGHT; SCHOTTKY DIODES; TEMPERATURE RANGES; THERMIONIC FIELD EMISSION; TRAP ASSISTED TUNNELLING;

SCHOTTKY BARRIER DIODES;

EID: 50249174422     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2008.04.007     Document Type: Article

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