Impedance and barrier capacitance of silicon diodes implanted with high-energy Xe ions

Microelectronics Reliability

Volumn 50, Issue 6, 2010, Pages 813-820

  Poklonski, N A ^a   Gorbachuk, N I ^a   Shpakovski, S V ^b   Filipenia, V A ^c   Lastovskii, S B ^d   Skuratov, V A ^e   Wieck, A ^f   Markevich, V P ^g  

^a BELARUSIAN STATE UNIVERSITY   (Belarus)

^b Transistor Plant Unitary Enterprise of the SPE Integral   (Belarus)

^c Belmicrosystems Research and Design Company of the SPE Integral   (Belarus)

^d INSTITUTE OF SOLID STATE AND SEMICONDUCTOR PHYSICS   (Belarus)

^e JOINT INSTITUTE FOR NUCLEAR RESEARCH   (Russian Federation)

^f RUHR UNIVERSITY BOCHUM   (Germany)

^g UNIVERSITY OF MANCHESTER   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER CAPACITANCE; CONCENTRATION OF; DEFECT LAYERS; DIFFERENTIAL CONDUCTANCES; FREQUENCY DEPENDENCE; HIGH ENERGY; IMAGINARY PARTS; NON-MONOTONIC DEPENDENCE; P-N JUNCTION; REVERSE BIAS VOLTAGE; SILICON DIODES;

BIAS VOLTAGE; CAPACITANCE; DEFECTS; DIODES; SEMICONDUCTOR JUNCTIONS; XENON;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77953324922     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2010.02.007     Document Type: Article

References (52)

1. Milnes A.G. Deep impurities in semiconductors (1973), Wiley, New York [Mir: Moscow; 1977]
2. Vavilov V.S., Gorin B.M., Danilin N.S., Kiv A.E., Nurov Y.L., and Shahovtsov V.I. Radiation methods in solid state electronics (1990), Radio i svyaz, Moscow [in Russian]
3. Kozlov V.A., and Kozlovski V.V. Doping of semiconductors using radiation defects produced by irradiation with protons and alpha particles. Semiconductors 35 (2001) 735-761
4. + Si diode. Physica B 376-377 (2006) 181-184
5. +-n structures with a buried layer of radiation-induced defects. Semiconductors 32 (1998) 325-331
6. Fizzotti F., Colombo E., Lo Giudice A., Manfredotti C., Medunic Z., Jaksic M., et al. Measurement of charge collection profiles in irradiated silicon diodes by lateral IBIC technique. Nucl Instrum Methods B 260 (2007) 259-263
7. rr (USQ-diode) using local lifetime control by He ion irradiation. In: Proceedings of the 13th international symposium "Power semiconductor devices and ICs" (ISPSD'01), Osaka, Japan; 2001. p. 235-8.
8. Vobecký J., Hazdra P., and Záhlava V. Impact of the electron, proton and helium irradiation on the forward I-V characteristics of high-power P-i-N diode. Microelectron Reliab 43 (2003) 537-544
9. Hazdra P., and Komarnitskyy V. Lifetime control in silicon power P-i-N diode by ion irradiation: suppression of undesired leakage. Microelectron J 37 (2006) 197-203
10. Hazdra P., Vobecký J., Dorschner H., and Brand K. Axial lifetime control in silicon power diodes by irradiation with protons, alphas, low- and high-energy electrons. Microelectron J 35 (2004) 249-257
11. Komarov F.F. Defect and track formation in solids irradiated by superhigh-energy ions. Phys Usp 46 (2003) 1253-1282
12. Chelyadinskii A.R., and Komarov F.F. Defect-impurity engineering in implanted silicon. Phys Usp 46 (2003) 789-820
13. Vavilov V.S., and Chelyadinskii A.R. Impurity ion implantation into silicon single crystals: efficiency and radiation damage. Phys Usp 38 (1995) 333-344
14. Chelyadinskii A.R., Varichenko V.S., and Zaitsev A.M. Spatial distribution, build-up, and annealing of radiation defects in silicon implanted by high-energy krypton and xenon ions. Phys Solid State 40 (1998) 1478-1481
15. Nastasi M., and Mayer J.W. Ion implantation and synthesis of materials (2006), Springer, Berlin
16. Hazdra P., Rubeš J., and Vobecky J. Divacancy profiles in MeV helium irradiated silicon from reverse I-V measurement. Nucl Instrum Methods B 159 (1999) 207-217
17. Siemieniec R., Niedernostheide F.-J., Schulze H.-J., Südkamp W., Kellner-Werdehausen U., and Lutz J. Irradiation-induced deep levels in silicon for power device tailoring. J Electrochem Soc 153 (2006) G108-G118
18. +n-junction-defect layer formed by 250 MeV krypton implantation. Physica B 404 (2009) 4667-4670
19. +26 swift heavy ions. Nucl Instrum Methods B 266 (2008) 5007-5012
20. Sathyavathi P., Bhave P.S., and Bhoraskar V.N. Irradiation effects of 35 MeV lithium and 70 MeV oxygen ions on the hole lifetime and the forward current of silicon diodes. Solid State Commun 106 (1998) 755-758
21. Bhave P.S., and Bhoraskar V.N. Irradiation effects of high energy heavy ions on the switching characteristics of p-n junction diodes. Nucl Instrum Methods B 127/128 (1997) 383-387
22. Siemieniec R., and Lutz J. Possibilities and limits of axial lifetime control by radiation induced centers in fast recovery diodes. Microelectron J 35 (2004) 259-267
23. Hazdra P., and Komarnitskyy V. Influence of radiation defects on formation of thermal donors in silicon irradiated with high-energy helium ions. Mater Sci Eng B 159-160 (2009) 346-349
24. Lebedev A.A., Lebedev A.A., and Davydov D.V. Capacitance measurements for diodes in the case of strong dependence of the diode-base series resistance on the applied voltage. Semiconductors 34 (2000) 115-118
25. Straub A., Gebs R., Habenicht H., Trunk S., Bardos R.A., Sproul A.B., and Aberle A.G. Impedance analysis: a powerful method for the determination of the doping concentration and built-in potential of nonideal semiconductor p-n diodes. J Appl Phys 97 (2005) 083703-1-083703-8
26. McPherson M. Capacitive effects in neutron-irradiated silicon diodes. Nucl Instrum Methods A 488 (2002) 100-109
27. McPherson M. Fermi level pinning in irradiated silicon considered as a relaxation-like semiconductor. Physica B 344 (2004) 52-57
28. Emel'yanov A.M., Sobolev N.A., and Yakimenko A.N. Capacitance-voltage characteristics of p-n structures based on (1 1 1) Si doped with erbium and oxygen. Semiconductors 35 (2001) 316-320
29. Kavasoglu A.S., Kavasoglu N., and Oktik S. Simulation for capacitance correction from Nyquist plot of complex impedance-voltage characteristics. Solid-State Electron 52 (2008) 990-996
30. Saadoune A., Dehimi L., Sengouga N., McPherson M., and Jones B.K. Modelling of semiconductor diodes made of high defect concentration, irradiated, high resistivity and semi-insulating material: The capacitance-voltage characteristics. Solid-State Electron 50 (2006) 1178-1182
31. Sze S.M., and Ng K.K. Physics of semiconductor devices (2007), Wiley, New York
32. Process Wizard - 1D, version 1.3, Dawn Technologies, Inc.; 1999.
33. Ziegler J.F. SRIM-2003. Nucl Instrum Methods B 219-220 (2004) 1027-1036
34. Hazdra P., Vobecky J., and Brand K. Optimum lifetime structuring in silicon power diodes by means of various irradiation techniques. Nucl Instrum Methods B 186 (2002) 414-418
35. Staňo J., Skuratov V.A., Žiška M., and Kováč P. Radiation-induced defects in MOS structures after irradiation with high-energy Ar, Kr, Bi heavy ions. Vacuum 78 (2005) 627-630
36. Giri P.K. Electrical signature for configurational bistability of self-intersitial clusters in ion-damaged silicon. Physica B 340-342 (2003) 729-733
37. Varichenko V.S., Zaitsev A.M., Lindner J.K.N., Domres R., Penina N.M., Erchak D.P., et al. EPR, XRD and optical reflectivity studies of radiation damage in silicon after high energy implantation of Ni ions. Nucl Instrum Methods B 94 (1994) 240-244
38. Siemieniec R., Schulze H.-J., Niedernostheide F.-J., Südkamp W., and Lutz J. Compensation and doping effects in heavily helium-radiated silicon for power device applications. Microelectron J 37 (2006) 204-212
39. Berman L.S., and Lebedev A.A. Deep-level capacitance spectroscopy of semiconductors (1981), Nauka, Leningrad [in Russian]
40. Lebedev A., Sobolev N.A., and Urunbaev B.M. Influence of inhomogeneous compensation on the capacitance measurements. Sov Phys Semicond 16 (1982) 1207
41. Wang C.D., Zhu C.Y., Zhang G.Y., Shen J., and Li L. Accurate electrical characterization of forward AC behavior of real semiconductor diode: Giant negative capacitance and nonlinear interfacial layer. IEEE Trans Electron Dev 50 (2003) 1145-1148
42. Drozdovski N.V., Drozdovskaia L.M., Caverly R.H., and Quinn M.J. Modeling the zero and forward bias operation of PIN diodes for high-frequency applications. Solid-State Electron 46 (2002) 2001-2008
43. Campbell D., Chilingarov A., and Sloan T. Evaluation of possible equivalent circuits for the description of the CV characteristics of heavily irradiated Si diodes. Nucl Instrum Methods A 552 (2005) 152-157
44. 2-GaAs structure characteristics by electrical equivalent circuit with constant phase element. Thin Solid Films 415 (2002) 133-137
45. Kochowski S., Nitsch K., Paszkiewicz B., and Paszkiewicz R. Two constant phase element behaviour of the admittance characteristics of GaAs metal-insulator-semiconductor structure with deep traps. Thin Solid Films 444 (2003) 208-214
46. 2-(n) GaAs structure by analysis of the equivalent circuit parameters at different temperatures. Thin Solid Films 467 (2004) 190-196
47. Kochowski S., Nitsch K., Paszkiewicz B., Paszkiewicz R., and Szydłowski M. Studies of GaAs metal-insulator-semiconductor structures by the admittance spectroscopy method. Appl Surf Sci 235 (2004) 389-394
48. In: Barsoukov E., and Macdonald J.R. (Eds). Impedance spectroscopy: theory, experiment, and applications (2005), Wiley, Hoboken
49. Dyre J.C., and Schrøder T.B. Hopping models and ac universality. Phys Status Solidi (B) 230 (2002) 5-13
50. Long A.R. Frequency-dependent loss in amorphous semiconductors. Adv Phys 31 (1982) 553-637
51. Drechsel J., Pfeiffer M., Zhou X., Nollau A., and Leo K. Organic Mip-diodes by p-doping of amorphous wide-gap semiconductors: CV and impedance spectroscopy. Synthetic Met 127 (2002) 201-205
52. Poklonski N.A., Vyrko S.A., and Zabrodskii A.G. Calculation of capacitance of self-compensated semiconductors with intercenter hops of one and two electrons (by the example of silicon with radiation defects). Semiconductors 42 (2008) 1388-1394