Characterization of the interface and the bulk phenomena in metal-SiO 2-(n) GaAs structure by analysis of the equivalent circuit parameters at different temperatures

Thin Solid Films

Volumn 467, Issue 1-2, 2004, Pages 190-196

  Kochowski, S ^a   Nitsch, K ^b   Paszkiewicz, B ^b   Paszkiewicz, R ^b  

^a SILESIAN UNIVERSITY OF TECHNOLOGY   (Poland)

^b WROCLAW UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

Constant phase element; Electrical properties and measurements; Gallium arsenide; Metal insulator semiconductor structure

Indexed keywords

ADMITTANCE SPECTRA; CONSTANT PHASE ELEMENTS; ELECTRICAL PROPERTIES AND MEASUREMENTS; METAL-INSULATOR-SEMICONDUCTOR STRUCTURES;

ACTIVATION ENERGY; CAPACITANCE; ELECTRIC ADMITTANCE; ELECTRIC CONDUCTANCE; ELECTRIC RESISTANCE; ELECTRON TUNNELING; FREQUENCY RESPONSE; INTERFACES (MATERIALS); MISFET DEVICES; SILICA;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 4444329489     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.04.008     Document Type: Article

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