Two constant phase element behaviour of the admittance characteristics of GaAs metal-insulator-semiconductor structure with deep traps

Thin Solid Films

Volumn 444, Issue 1-2, 2003, Pages 208-214

  Kochowski, S ^a   Nitsch, K ^b   Paszkiewicz, B ^b   Paszkiewicz, R ^b  

^a SILESIAN UNIVERSITY OF TECHNOLOGY   (Poland)

^b WROCLAW UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

Constant phase element; Electrical properties and measurements; Gallium arsenide; Metal insulator semiconductor structure

Indexed keywords

CAPACITANCE; ELECTRIC CONDUCTANCE; SEMICONDUCTING GALLIUM ARSENIDE; SILICA;

PHASE ELEMENT BEHAVIOR;

METAL INSULATOR BOUNDARIES;

EID: 0142075180     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(03)01024-1     Document Type: Article

References (34)

1. Look D.C. Electrical Characterization of GaAs Materials and Devices. 1989;187-217 John Wiley and Sons, New York.
2. Hasegawa H. Thin Solid Films. 367:2000;58.
3. Charache G.W., Akram S., Maby E.W., Bhat I.B. IEEE Trans. Electron Dev. ED-44. 1997;1837.
4. Balakrishnan V.R., Kumar V., Ghosh S. Semicond. Sci. Technol. 13:1998;1094.
5. Mochizuki Y., Mizuta M. Appl. Surf. Sci. 117/118:1997;614.
6. Lefebvre P.R., Lai L., Irene E.A. J. Vac. Sci. Technol. B. 16:1998;996.
7. Eftekhari G. Thin Solid Films. 248:1994;199.
8. Sik H., Feurprier Y., Cardinaud C., Turban G., Scavennec A. J. Electrochem. Soc. 144:1997;2106.
9. Gaman V.I., Kalygina V.M., Panin A.V. Solid State Electron. 43:1999;583.
10. Bhat K.N. IETE Tech. Rev. 14:1997;387.
11. Nicollian E.H., Brews J.R. MOS (Metal-Oxide-semiconductor) Physics and Technology. 1982;Wiley, New York.
12. Sawada T., Hasegawa H. Thin Solid Films. 56:1979;183.
13. Hasegawa H., Sawada T. Thin Solid Films. 103:1983;119.
14. Kochowski S., Nitsch K., Paszkiewicz R. Thin Solid Films. 348:1999;180.
15. Kochowski S., Nowak M. Vacuum. 54:1999;183.
16. S. Kochowski. B. Paszkiewicz, R. Paszkiewicz, Proceedings of the 29th International Symposium on Semiconducting Compounds ISCS 2002, Lausanne, Switzerland, October 7-10, 2002 (to be published by Institute of Physics Conference Series).
17. Macdonald J.R. Impedance Spectroscopy. 1987;John Wiley and Sons.
18. Nitsch K. Impedance Spectroscopy in the Investigation of Electronic Materials. 1999;Publishing House of Wroclaw Technical University, Wroclaw. (in Polish).
19. Kochowski S., Nitsch K. Thin Solid Films. 415:2002;133.
20. Grimnes S., Martinsen O.G. Bioimpedance and Bioelectricity BASICS. 2000;209-227 Academic Press.
21. Macdonald J.R. Solid State Ionics. 13:1984;147.
22. Kochowski S., Paszkiewicz B., Paszkiewicz R. Vacuum. 57:2000;157.
23. Sik H., Feurprier Y., Cardinaud C., Turban G., Scavennec A. J. Electrochem. Soc. 144:1997;2106.
24. Nannichi Y., Fan J.F., Oigawa H., Koma A. Jpn. J. Appl. Phys. 27:1988;L2367.
25. Fan J.F., Kurata Y., Nannichi Y. Jpn. J. Appl. Phys. 28:1989;L2255.
26. Fan J.F., Oigawa H., Nannichi Y. Jpn. J. Appl. Phys. 27:1988;L2125.
27. Oigawa H., Fan J.F., Nannichi Y., Sugahara H., Oshima M. Jpn. J. Appl. Phys. 30:1991;L322.
28. Oigawa H., Fan J.F., Nannichi Y., Ando K., Saiki K., Koma A. Jpn. J. Appl. Phys. 28:1989;L340.
29. Shikata O., Hayashi H. J. Appl. Phys. 70:1991;3721.
30. Jayan V., Sridevan S., Vaya P.R. Appl. Surf. Sci. 74:1994;197.
31. Dharival S., Deoraj B.M. Solid State Electron. 36:1993;1165.
32. Biednyi B.I., Baidus N.V., Belich T.V., Karpovich I.A. Fiz. Tekh. Poluprovodn. 26:1992;1383.
33. Brug G.J., Van den Eeden A.L.G., Sluyters-Rehbach M., Sluyters J.H. J. Electroanal. Chem. 176:1984;275.
34. Brunson K.M., Sands D., Thomas C.B., Reehal H.S. J. Appl. Phys. 62:1987;185.