Compensation and doping effects in heavily helium-radiated silicon for power device applications

Microelectronics Journal

Volumn 37, Issue 3, 2006, Pages 204-212

  Siemieniec, R ^a   Schulze, H J ^b   Niedernostheide, F J ^b   Sudkamp W ^b   Lutz, J ^c  

^a INFINEON TECHNOLOGIES AUSTRIA AG   (Austria)

^b INFINEON TECHNOLOGIES AG   (Germany)

^c Aktiv Sensor GmbH   (Germany)

Author keywords

Compensation effects; Doping effects; Helium irradiation; Lifetime control; Recombination centres

Indexed keywords

ANNEALING; CAPACITANCE; DIODES; DOPING (ADDITIVES); ELECTRON ENERGY LEVELS; HELIUM; IONS; POWER ELECTRONICS;

COMPENSATION EFFECTS; DOPING EFFECTS; HELIUM IRRADIATION; LIFETIME CONTROL; RECOMBINATION CENTERS;

SILICON;

EID: 29244433184     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2005.09.011     Document Type: Article

References (21)

1. F. Robb, I. Wau, and S. Ju Increasing the switching speed of high-voltage IGBTs Proceedings of the ISPSD, Weimar 1997 pp. 251-254
2. T. Nakagawa, K. Satoh, M. Yamamoto, K. Hirasawa, and K. Ohta 8 kV/3.6 kA light triggered thyristor Proceedings of the ISPSD, Yokohama 1995 pp. 175-180
3. J. Lutz Axial recombination centre technology for freewheeling diodes Proceedings of the EPE, Trondheim 1997 pp. 1502-1506
4. R. Siemieniec, and J. Lutz Possibilities and limits of axial lifetime control by radiation induced centres in fast recovery diodes Microelectronics Journal 35 3 2004 259 267
5. N. Kaminski, N. Galster, S. Linder, C. Ng, and R. Francis 1200 V merged PIN schottky diode with soft recovery and positive temperature coefficient Proceedings of the EPE, Lausanne 1999
6. J. Vobecký, P. Hazdra, and J. Homola Optimization of power diode characteristics by means of ion irradiation IEEE Transactions on Electron Devices 43 1996 2283 2289
7. F.-J. Niedernostheide, M. Schmitt, H.-J. Schulze, U. Kellner-Werdehausen, A. Frohnmeyer, and G. Wachutka Analysis of radiation-induced defects and performance conditioning in high-power devices Journal of the Electrochemical Society 150 1 2003 G15 G21
8. H.J. Schulze, F.-J. Niedrnostheide, M. Schmitt, U. Kellner-Werdehausen, and G. Wachuttka, Influence of irradiation-induced defects on the electrical performance of power devices ECS Proceedings 20 2002 320 335
9. G.D. Watkins Vacancies and Interstitials and their interaction with impurities in c-Si, Properties of Crystalline Silicon R. Hull EMIS Datareviews Series, London 20 1999 643 652 Inspec
10. G.K. Wertheim Transient recombination of excess carriers in semiconductors Physical Review 100 4 1958 1086 1091
11. H. Gajewski, B. Heinemann, and H. Langmach TeSCA-Handbuch 1991 Weierstrass-Institute for Applied Analysis and Stochastics Berlin
12. R. Siemieniec, Simulation von Leistungsbauelementen mit durch Bestrahlungsverfahren eingestellter Trägerlebensdauer, Ph.D. thesis TU Ilmenau, BoD Verlag Norderstedt, 2003.
13. R. Siemieniec, F.-J. Niedernostheide, H.-J. Schulze, W. Südkamp, U. Kellner-Werdehausen, and J. Lutz Irradiation-induced deep levels in silicon EMIS Proceedings, Hawaii 5 2004 pp. 369-384
14. E.V. Monakhov, B.S. Avset, A. Hallen, and B.G. Svensson Formation of a double acceptor centre during divacancy annealing in low-doped high-purity oxygenated Si Physics Review B 65 2002 233207
15. J. Guldberg Electron trap annealing in neutron transmutation doped silicon Applied Physics Letters 31 9 1977 578
16. C.A.J. Ammerlaan Thermal double donors in c-Si R. Hull Properties of Crystalline Silicon EMIS Datareviews Series vol. 20 1999 Inspec, pp. 663-668
17. S.D. Brotherton, and P. Bradley Defect production and lifetime control in electron and gamma-irradiated silicon Journal of Applied Physics 53 8 1982 5720 5732
18. W. Südkamp, and W. Gerlach Untersuchung tiefer Zentren und Bauelementesimulation, VDI/VDE-IT - Reihe Innovationen in der Mikrosystemtechnik 1999
19. I. Dudeck, and R. Kassing The influence of recombination data on the I-V characteristics of silicon p-i-n diodes Journal of Applied Physics 48 11 1977 4786 4790
20. P. Hazdra, J. Rubeš, and J. Vobecký Divacancy profiles in MeV helium irradiated silicon from reverse I-V measurement Nuclear Instruments and Methods in Physics Research B159 1999 207 217
21. K. Gill, G. Hall, and B. MacEvoy Bulk damage effects in irradiated silicon detectors due to clustered divacancies Journal of Applied Physics 82 1997 126 136