Irradiation effects of high energy heavy ions on the switching characteristics of p-n junction diodes

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 127-128, Issue , 1997, Pages 383-387

  Bhave, P S ^a   Bhoraskar, V M ^a  

^a UNIVERSITY OF PUNE   (India)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; CRYSTAL DEFECTS; ION BEAMS; ION BOMBARDMENT; RADIATION EFFECTS; SEMICONDUCTOR JUNCTIONS; SILICON WAFERS; SWITCHING;

HIGH ENERGY HEAVY IONS;

SEMICONDUCTOR DIODES;

EID: 0031547657     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(96)00962-7     Document Type: Article

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