Kinetics of reverse resistance recovery of silicon diodes: The role of the distance the metallurgical p+n-junction-defect layer formed by 250 MeV krypton implantation

Physica B: Condensed Matter

Volumn 404, Issue 23-24, 2009, Pages 4667-4670

  Poklonski, N A ^a   Gorbachuk, N I ^a   Shpakovski, S V ^b   Filipenia, V A ^b   Skuratov, V A ^c   Wieck, A ^d  

^a BELARUSIAN STATE UNIVERSITY   (Belarus)

^b SPE Integral   (Belarus)

^c JOINT INSTITUTE FOR NUCLEAR RESEARCH   (Russian Federation)

^d RUHR UNIVERSITY BOCHUM   (Germany)

Author keywords

Carrier lifetime; Ion irradiation; Reverse resistance recovery time

Indexed keywords

DEFECT LAYERS; FLUENCES; HIGH ENERGY; ION FLUENCES; ION IRRADIATION; KRYPTON IONS; P-N JUNCTION; RECOVERY TIME; REVERSE CURRENTS; REVERSE RESISTANCE RECOVERY TIME; SILICON DIODES; TRANSIENT PROCESS; TWO PHASIS; VACANCY DISTRIBUTION;

CARRIER LIFETIME; CURRENT VOLTAGE CHARACTERISTICS; DIODES; IONS; IRRADIATION; KRYPTON; METALLURGY; RECOVERY;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 74449084831     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2009.08.129     Document Type: Article

References (10)

1. Kozlov V.A., and Kozlovski V.V. Semiconductors 35 (2001) 735
2. Hazdra P., and Kamarnitskyy V. Microelectron. J. 37 (2006) 197
3. Siemieniec R., et al. Microelectron. J. 37 (2006) 204
4. Hazdra P., et al. Nucl. Instrum. Methods B 186 (2002) 414
5. Poklonski N.A., et al. Nucl. Instrum. Methods B 266 (2008) 5007
6. Bhave P.S., and Bhoraskar V.N. Nucl. Instrum. Methods B 127/128 (1997) 383
7. Nastasi M., and Mayer J.W. Ion Implantation and Synthesis of Materials (2006), Springer, Berlin
8. Chelyadinskii A.R., et al. Phys. Solid State 40 (1998) 1478
9. Vavilov V.S., and Chelyadinskii A.R. Phys. Usp. 38 (1995) 333
10. Sze S.M., and Ng K.K. Physics of Semiconductor Devices (2007), Wiley, New York