Properties of p+-n structures with a buried layer of radiation-induced defects

Semiconductors

Volumn 32, Issue 3, 1998, Pages 325-331

  Ivanov, A M ^a   Strokan, N B ^a   Shuman, V B ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0347089451     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1187394     Document Type: Article

References (25)

1. S. M. Sze, Physics of Semiconductor Devices, Wiley, N. Y., 1969 [Russian translation, Mir, Moscow, 1984, Vol. 1].
2. J. von Borany, B. Schmidt, and R. Grotzschel, Nucl. Instrum. Methods Phys. Res. A 377, 514 (1996).
3. J. Martin, E. Haas, and K. Raithel, Solid-State Electron. 9, 83 (1966).
4. L. S. Berman, A. D. Remenyuk, and V. B. Shuman, Fiz. Tekh. Poluprovodn. 15, 1155 (1981) [Sov. Phys. Semicond. 15, 665 (1981)].
5. L. S. Berman, A. D. Remenyuk, and V. B. Shuman, Fiz. Tekh. Poluprovodn. 15, 1155 (1981) [Sov. Phys. Semicond. 15, 665 (1981)].
6. A. M. Ivanov, N. B. Strokan, and V. B. Shuman, Pis'ma Zh. Tekh. Fiz. 23, 79 (1997) [Tech. Phys. Lett. 23, 369 (1997)].
7. A. M. Ivanov, N. B. Strokan, and V. B. Shuman, Pis'ma Zh. Tekh. Fiz. 23, 79 (1997) [Tech. Phys. Lett. 23, 369 (1997)].
8. A. M. Ivanov, I. N. Il'yashenko, N. B. Strokan, and B. Shmidt, Fiz. Tekh. Poluprovodn. 29, 543 (1995) [Semiconductors 29, 281 (1995)].
9. A. M. Ivanov, I. N. Il'yashenko, N. B. Strokan, and B. Shmidt, Fiz. Tekh. Poluprovodn. 29, 543 (1995) [Semiconductors 29, 281 (1995)].
10. V. V. Emtsev, T. B. Mashovets, and V. V. Mikhnovich, Fiz. Tekh. Poluprovodn. 26, 20 (1992) [Sov. Phys. Semicond. 26, 12 (1992)].
11. V. V. Emtsev, T. B. Mashovets, and V. V. Mikhnovich, Fiz. Tekh. Poluprovodn. 26, 20 (1992) [Sov. Phys. Semicond. 26, 12 (1992)].
12. E. M. Verbitskaya, V. K. Eremin, A. M. Ivanov, and N. B. Strokan, Fiz. Tekh. Poluprovodn. 27, 205 (1993) [Semiconductors 27, 115 (1993)].
13. E. M. Verbitskaya, V. K. Eremin, A. M. Ivanov, and N. B. Strokan, Fiz. Tekh. Poluprovodn. 27, 205 (1993) [Semiconductors 27, 115 (1993)].
14. N. V. Kuznetsov, V. N. Filatov, and V. G. Vinogradova, Fiz. Tekh. Poluprovodn. 21, 609 (1987) [Sov. Phys. Semicond. 21, 374 (1987)].
15. N. V. Kuznetsov, V. N. Filatov, and V. G. Vinogradova, Fiz. Tekh. Poluprovodn. 21, 609 (1987) [Sov. Phys. Semicond. 21, 374 (1987)].
16. V. S. Vavilov, V. F. Kiselev, and B. N. Mukashev, Defects in and on the Surface of Silicon [in Russian], Nauka, Moscow, 1990.
17. A. Hallen, N. Keskitalo, F. Masszi, and V. Nagl, J. Appl. Phys. 79, 3906 (1996).
18. P. V. Kuchinskii and V. M. Lomako, Solid-State Electron. 29, 1041 (1986).
19. L. S. Berman and A. A. Levedev, Capacitance Deep Level Spectroscopy of Semiconductors [in Russian], Nauka, Leningrad, 1981.
20. S. M. Ryvkin, L. L. Makovskiǐ, N. B. Strokan, and A. Kh. Khusainov, Fiz. Tekh. Poluprovodn. 3, 1434 (1969) [Sov. Phys. Semicond. 3, 1205 (1969)].
21. S. M. Ryvkin, L. L. Makovskiǐ, N. B. Strokan, and A. Kh. Khusainov, Fiz. Tekh. Poluprovodn. 3, 1434 (1969) [Sov. Phys. Semicond. 3, 1205 (1969)].
22. L. L. Makovskiǐ, S. M. Ryvkin, N. B. Strokan, V. P. Subasheva, and A. Kh. Khusainov, in Physics of Electron-Hole Junctions and Semiconductor Devices [in Russian], Nauka, Leningrad, 1969.
23. Yu. N. Nosov, Physical Principles of Pulsed Operation of Semiconductor Diodes [in Russian], Nauka, Moscow, 1968.
24. M. Byczkowski and J. R. Madigan, J. Appl. Phys. 28, 878 (1957).
25. L. L. Makovsky, N. B. Strokan, and N. I. Tisnek, IEEE Trans. Nucl., Ser. 15, 304 (1968).