Axial lifetime control in silicon power diodes by irradiation with protons, alphas, low- and high-energy electrons

Microelectronics Journal

Volumn 35, Issue 3, 2004, Pages 249-257

  Hazdra, P ^a   Vobecky J ^a   Dorschner, H ^b   Brand, K ^c  

^a CZECH TECHNICAL UNIVERSITY IN PRAGUE   (Czech Republic)

^b LEIBNIZ INSTITUTE OF POLYMER RESEARCH DRESDEN   (Germany)

^c RUHR UNIVERSITY BOCHUM   (Germany)

Author keywords

Alphas; Electrons; Irradiation; Lifetime control; Power diodes; Protons; Silicon

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON IRRADIATION; HIGH ENERGY PHYSICS; PROBABILITY; PROTON IRRADIATION; SEMICONDUCTOR DIODES; SEMICONDUCTOR JUNCTIONS;

AXIAL LIFETIME CONTROL; SILICON POWER DIODES;

POWER ELECTRONICS;

EID: 0742267116     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2692(03)00194-0     Document Type: Conference Paper

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