Studies of GaAs metal-insulator-semiconductor structures by the admittance spectroscopy method

Applied Surface Science

Volumn 235, Issue 3, 2004, Pages 389-394

  Kochowski, S ^a   Nitsch, K ^b   Paszkiewicz, B ^b   Paszkiewicz, R ^b   Szydlowski M ^a  

^a SILESIAN UNIVERSITY OF TECHNOLOGY   (Poland)

^b WROCLAW UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

Constant phase element; Electrical properties and measurements; Gallium arsenide; Metal insulator semiconductor structure

Indexed keywords

CAPACITANCE; ELECTRIC ADMITTANCE; ELECTRIC POTENTIAL; ELECTROCHEMISTRY; ELECTRON ENERGY LEVELS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SPECTROSCOPIC ANALYSIS;

CONSTANT PHASE ELEMENTS (CPE); ELECTRICAL PROPERTIES AND MEASUREMENTS; ELECTROCHEMICAL SYSTEMS; METAL-INSULATOR-SEMICONDUCTOR ( MIS) STRUCTURES;

MIS DEVICES;

EID: 4243191480     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.05.111     Document Type: Conference Paper

References (28)

1. Hasegawa H. Thin Solid Films. 367:2000;58.
2. D.C. Look, Electrical Characterization of GaAs Materials and Devices, Wiley, New York, 1989, pp. 187-217.
3. Remashan K., Bhat K.N. Semicond. Sci. Technol. 17:2002;243.
4. Chakraborty B.R., Dilavar N., Pal S., Bose D.N. Thin Solid Films. 411:2002;240.
5. Callen O., Moser V. Mater. Sci. Eng. B. 80:2001;142.
6. Chen Z., Gong D. J. Appl. Phys. 90:2001;4205.
7. Pal S., Bose D.N. Appl. Surf. Sci. 181:2001;179.
8. Jun B.N., Kim D.H., Leem J.Y., Lee J.H., Lee Y.H. Thin Solid Films. 360:2000;229.
9. Remashan K., Bhat K.N. Thin Solid Films. 342:1999;20.
10. Lefebfre P.R., Lai L., Irene E.A. J. Vac. Sci. Technol. B. 16:1998;996.
11. Thurzo I., Ivanco J. Appl. Surf. Sci. 106:1997;181.
12. Sik H., Feurprier Y., Cardinaud C., Turban G., Scavennec A. J. Electrochem. Soc. 144:1997;2106.
13. Gaman V.I., Kalygina V.M., Panin A.V. Solid State Electron. 43:1999;583.
14. Eftekhari G. Thin Solid Films. 248:1994;199.
15. Mochizuki Y., Mizuta M. Appl. Surf. Sci. 117/118:1997;614.
16. E.H. Nicollian, J.R. Brews, MOS (Metal-Oxide-Semiconductor) Physics and Technology, Wiley, New York, 2003.
17. Sawada T., Hasegawa H. Thin Solid Films. 56:1979;183.
18. Hasegawa H., Ohno W., Ishii H., Hage T., Takahashi Y. Appl. Surf. Sci. 41/42:1989;372.
19. Hasegawa H., Sawada T. Thin Solid Films. 103:1983;119.
20. J.R. Macdonald, Impedance Spectroscopy, Wiley, 1987.
21. Kochowski S., Nitsch K. Thin Solid Films. 415:2002;133.
22. Kochowski S., Nitsch K., Paszkiewicz B., Paszkiewicz R. Thin Solid Films. 444:2003;208.
23. Kochowski S., Nitsch K., Paszkiewicz R. Thin Solid Films. 348:1999;180.
24. Kochowski S., Nowak M. Acta Phys. Polon. A. 69:1986;517.
25. Brug G.J., Van den Eeden A.L.G., Sluyters-Rehbach M., Sluyters J.H. J. Electroanal. Chem. 176:1984;275.
26. Hens Z., Gomes W.P. Phys. Chem. Chem. Phys. 1:1999;3607.
27. Hens Z., Gomes W.P. Phys. Chem. Chem. Phys. 1:1999;3617.
28. Laflere W.H., Van Meirhaeghe R.L., Cardon F., Gomes W.P. Surf. Sci. 59:1976;401.