SCOPUS 정보 검색 플랫폼

Volumn 415, Issue 1-2, 2002, Pages 133-137

Description of the frequency behaviour of metal-SiO2-GaAs structure characteristics by electrical equivalent circuit with constant phase element

(2) Kochowski, S a Nitsch, K b

a SILESIAN UNIVERSITY OF TECHNOLOGY (Poland)

b WROCLAW UNIVERSITY OF TECHNOLOGY (Poland)

Author keywords

Constant phase element; Electrical properties and measurements; Gallium arsenide; Metal insulator semiconductor structure

Indexed keywords

CAPACITANCE MEASUREMENT; ELECTRIC CONDUCTANCE; ELECTRIC RESISTANCE; EQUIVALENT CIRCUITS; METAL INSULATOR BOUNDARIES; SEMICONDUCTING GALLIUM ARSENIDE; SILICA; SPECTROSCOPIC ANALYSIS;

CONSTANT PHASE ELEMENTS (CPE);

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0036671683 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/S0040-6090(02)00506-0 Document Type: Article

Times cited : (66)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.