Electrical signature for configurational bistability of self-interstitial clusters in ion-damaged silicon

Physica B: Condensed Matter

Volumn 340-342, Issue , 2003, Pages 729-733

  Giri, P K ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY GUWAHATI   (India)

Author keywords

DLTS; Interstitial clusters; Ion irradiation; Metastable defects

Indexed keywords

ANNEALING; CAPACITANCE; COMPUTER SIMULATION; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON TRAPS; ION IMPLANTATION; KINETIC THEORY; MOLECULAR DYNAMICS; SILICON;

INTERSTITIAL CLUSTERS; METASTABLE DEFECTS;

CRYSTAL DEFECTS;

EID: 0345873462     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2003.09.109     Document Type: Conference Paper

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