Impact of the electron, proton and helium irradiation on the forward I - V characteristics of high-power P-i-N diode

Microelectronics Reliability

Volumn 43, Issue 4, 2003, Pages 537-544

  Vobecky J ^a   Hazdra, P ^a   Zahlava V ^a  

^a CZECH TECHNICAL UNIVERSITY IN PRAGUE   (Czech Republic)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECTS; ELECTRON IRRADIATION; HELIUM; PROTON IRRADIATION;

HELIUM IRRADIATION;

SEMICONDUCTOR DIODES;

EID: 0037381419     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(03)00023-4     Document Type: Conference Paper

References (6)

1. Vobecký J., Hazdra P., Humbel O., Galster N. Crossing point current of electron and proton irradiated power P-i-N diodes. Microelectron. Reliab. 40:2000;427-433.
2. ATLAS User's Manual, version 5.0.0.R, SILVACO Int., Santa Clara, 2000.
3. Hazdra P., Vobecký J. Accurate simulation of fast ion irradiated power devices. Solid-State Electron. 37:1994;123-134.
4. Klaassen D.B.M. A unified mobility model for device simulation. II. Temperature dependence of carrier mobility and lifetime. Solid-State Electron. 35:1992;961-967.
5. Kimerling L.C. Influence of deep traps on the measurement of free-carrier distributions in semiconductors by junction capacitance techniques. J. Appl. Phys. 45:1974;1839.
6. Keskitalo N., Hallen A. Resistivity profile measurements of proton-irradiated N-type silicon. Solid-State Electron. 37:1994;55.