A fast & soft recovery diode with ultra small Qrr (USQ-diode) using local lifetime control by He ion irradiation

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn , Issue , 2001, Pages 235-238

  Nishiwaki, K ^a   Kushida, T ^a   Kawahashi, A ^a  

^a TOYOTA MOTOR CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CRYSTAL DEFECTS; HOLE MOBILITY; INSULATED GATE BIPOLAR TRANSISTORS; IRRADIATION; SEMICONDUCTOR JUNCTIONS;

FORWARD VOLTAGE DROP; ION IRRADIATION;

SEMICONDUCTOR DIODES;

EID: 0034833110     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. An analysis and improvement of destruction immunity during reverse recovery for high voltage planar diode under high dirr/dt condition
2. A novel soft and fast recovery diode (SFD) with thin p-layer formed by Al-Si electrode
3. Future trends in local lifetime control