Divacancy profiles in MeV helium irradiated silicon from reverse I-V measurement

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 159, Issue 4, 1999, Pages 207-217

  Hazdra, P ^a   Rubes J ^a   Vobecky J ^a  

^a CZECH TECHNICAL UNIVERSITY IN PRAGUE   (Czech Republic)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; CURRENT VOLTAGE CHARACTERISTICS; DEEP LEVEL TRANSIENT SPECTROSCOPY; HELIUM; ION BOMBARDMENT; RADIATION DAMAGE; SEMICONDUCTING SILICON; VOLTAGE MEASUREMENT;

DIVACANCY PROFILES; REVERSE CURRENT GRADIENTS;

SEMICONDUCTOR DIODES;

EID: 0033329499     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(99)00565-0     Document Type: Article

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