Influence of radiation defects on formation of thermal donors in silicon irradiated with high-energy helium ions

Materials Science and Engineering: B

Volumn 159-160, Issue C, 2009, Pages 346-349

  Hazdra, P ^a   Komarnitskyy, V ^a  

^a CZECH TECHNICAL UNIVERSITY IN PRAGUE   (Czech Republic)

Author keywords

Helium irradiation; Radiation defects; Silicon; Thermal donors

Indexed keywords

ANNEALING; ATOMS; HELIUM; HYDROGEN; IONS; OXYGEN; RADIATION DAMAGE;

CONCENTRATION PROFILES; DIFFUSION LENGTH; ENERGY; HELIUM ION; HELIUM IRRADIATION; HYDROGEN ATOMS; INTERSTITIAL OXYGEN; ISOTHERMAL ANNEALINGS; RADIATION DEFECTS; THERMAL DONOR;

SILICON;

EID: 67349155271     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2008.10.008     Document Type: Article

References (9)

1. Hazdra P., Vobecký J., and Brand K. Nucl. Instr. Meth. B 186 (2002) 414
2. Siemieniec R., Schulze H.-J., Niedernostheide F.-J., Südkamp W., and Lutz J. Microelectron. J. 37 (2006) 204
3. Hazdra P., and Komarnitskyy V. Nucl. Instr. Meth. B 253 (2006) 187
4. Newman R.C. J. Phys.: Condens. Matter 12 (2000) R235
5. Alfieri G., Monakhov E.V., Avset B.S., and Svensson B.G. Phys. Rev. B 68 (2003) 233202
6. Mikelsen M., Bleka J.H., Christensen J.S., Monakhov E.V., and Svensson B.G. Phys. Rev. B 75 (2007) 155202
7. Personnic S., Bourdelle K.K., and Letertre F. J. Appl. Phys. 101 (2007) 083529
8. Huang Y.L., Ma Y., Job R., and Ulyashin A.G. J. Appl. Phys. 96 (2004) 7080
9. Lindström J.L., Murin L.I., Svensson B.G., Markevich V.P., and Hallberg T. Physica B 340-342 (2003) 509