Electrical properties of silicon diodes with p+n junctions irradiated with 197Au+26 swift heavy ions

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 266, Issue 23, 2008, Pages 5007-5012

  Poklonski, N A ^a   Gorbachuk, N I ^a   Shpakovski, S V ^b   Petrov, A V ^c   Lastovskii, S B ^c   Fink, D ^d   Wieck, A ^e  

^a BELARUSIAN STATE UNIVERSITY   (Belarus)

^b Transistor Plant Unitary Enterprise Integral   (Belarus)

^c INSTITUTE OF SOLID STATE AND SEMICONDUCTOR PHYSICS   (Belarus)

^d HAHN MEITNER INSTITUT   (Germany)

^e RUHR UNIVERSITY BOCHUM   (Germany)

Author keywords

Carrier lifetime; DLTS spectra; Electron irradiation; I V measurement; Impedance measurement; p+n Junction diode; Swift heavy ion irradiation

Indexed keywords

CARRIER LIFETIME; CURRENT VOLTAGE CHARACTERISTICS; DIODES; ELECTRIC PROPERTIES; ELECTROLYSIS; ELECTRONS; HEAVY IONS; IONS; IRRADIATION; RADIATION; SEMICONDUCTING SILICON COMPOUNDS; SILICON;

DLTS SPECTRA; I-V MEASUREMENT; IMPEDANCE MEASUREMENT; P+N JUNCTION DIODE; SWIFT HEAVY ION IRRADIATION;

ELECTRON IRRADIATION;

EID: 56249103418     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2008.09.001     Document Type: Article

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