Evaluation of possible equivalent circuits for the description of the CV characteristics of heavily irradiated Si diodes

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 552, Issue 1-2, 2005, Pages 152-157

  Campbell, D ^a   Chilingarov, A ^a   Sloan, T ^a  

^a LANCASTER UNIVERSITY   (United Kingdom)

Author keywords

CV characteristics; Depletion voltage; Frequency dependence; Irradiated silicon detectors

Indexed keywords

ELECTRIC CURRENTS; IRRADIATION; SEMICONDUCTOR DIODES; SENSORS; VOLTAGE CONTROL; VOLTAGE MEASUREMENT;

CV CHARACTERISTICS; DEPLETION VOLTAGE; FREQUENCY DEPENDENCE; IRRADIATED SILICON DETECTORS;

EQUIVALENT CIRCUITS;

EID: 26444492552     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2005.06.024     Document Type: Conference Paper

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