Spatial distribution, build-up, and annealing of radiation defects in silicon implanted by high-energy krypton and xenon ions

Physics of the Solid State

Volumn 40, Issue 9, 1998, Pages 1478-1481

  Chelyadinskii A R ^a   Varichenko, V S ^a   Zaitsev A M ^a  

^a BELARUSIAN STATE UNIVERSITY   (Belarus)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0032357844     PISSN: 10637834     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1130580     Document Type: Article

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