Modelling of semiconductor diodes made of high defect concentration, irradiated, high resistivity and semi-insulating material: The capacitance-voltage characteristics

Solid-State Electronics

Volumn 50, Issue 7-8, 2006, Pages 1178-1182

  Saadoune, A ^a   Dehimi, L ^a   Sengouga, N ^a   McPherson, M ^b   Jones, B K ^c  

^a UNIVERSITY OF BISKRA   (Algeria)

^b NORTH WEST UNIVERSITY   (South Africa)

^c LANCASTER UNIVERSITY   (United Kingdom)

Author keywords

Diode; Modelling; Radiation damage; Semi insulating; Semiconductor

Indexed keywords

CAPACITANCE; DEFECTS; ELECTRIC CONDUCTIVITY; ELECTRIC SPACE CHARGE; MATHEMATICAL MODELS; RADIATION DAMAGE;

CAPACITANCE-VOLTAGE CHARACTERISTICS; SEMI-INSULATING MATERIAL; SPACE CHARGE DENSITY;

SEMICONDUCTOR DIODES;

EID: 33747393365     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2006.06.004     Document Type: Article

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