Measurement of charge collection profiles in irradiated silicon diodes by lateral IBIC technique

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 260, Issue 1, 2007, Pages 259-263

  Fizzotti, F ^a   Colombo, E ^a   Lo Giudice, A ^a   Manfredotti, C ^a   Medunic, Z ^b   Jaksic, M ^b   Vittone, E ^a  

^a UNIVERSITY OF TURIN   (Italy)

^b RUDER BO KOVI INSTITUTE   (Croatia)

Author keywords

Electronic properties; Ion beam induced charge collection; Radiation damage; Semiconductors

Indexed keywords

CARRIER LIFETIME; ELECTRONIC PROPERTIES; HELIUM; ION BOMBARDMENT; OPTIMIZATION; POWER ELECTRONICS; RADIATION DAMAGE;

CHARGE COLLECTION EFFICIENCY (CCE); ION BEAM INDUCED CHARGE COLLECTION (IBIC); METALLIC IMPURITIES; RECOMBINATION CENTER; SEMICONDUCTOR POWER DEVICES; SILICON DIODES;

SEMICONDUCTOR DIODES;

EID: 34249910577     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2007.02.031     Document Type: Article

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